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MS: Chen Xingbi

published: 2016-12-16 17:42:44       hits: 

name : Chen Xingbi Sex: Male phone: +86 28-83202319
email: office-address: A1-04B, Science Building 211, No.4, Section 2, North Jianshe Road, Chengdu, Sichuan, China, 610054
PH.D  Supervisor: Yes   Master Supervisor: Yes
major: Microelectronics and Solid Electronics
research interst: Microelectronic devices and fabrication technology, particularly novel power semiconductor devices and smart power ICs, system-on-a-chip applications using power transistors, and physics of semiconductor device.
Biography:   Prof. Chen is graduated from the Tongji University in 1952 and has been working in the University of Electronic Science and Technology of China since 1956. He was a visiting scholar in Ohio university in 1980 and a visiting scholar in UC Berkeley in 1981-1982 doing research on power devices. He was also a visiting professor of the University of Toronto in 1994 and a senior visiting professor of the University of Wales, Swansea in 1995. In 1999, he was elected as an Academician by the Chinese Academy of Sciences. He is now a life senior member of the IEEE. He is also the recipient of the IEEE ISPSD Pioneer Award in 2015.
  As a senior semiconductor device physicist, he is best known for his invention of the “CB-layer” in 1993, later known as “Super-Junction (SJ)”. In his patent US 5,216,275A, the relationship between the on-resistance in unit area (Ron) and the breakdown voltage (VB) of the SJ-structure was firstly and explicitly presented as Ron∝VB^1.3, a very attractive relationship and a breakthrough to the traditional “Silicon Limit Ron∝VB^2.5”. Also some typical SJ-structures presented firstly in the patent are widely studied now, such as the SJ-structure containing oxide to isolate the p-column from the n-region in its voltage sustaining layer. Up to now, patent US 5,216,275A has been cited by more than 500 patents in the world, and there opened special subjects in several sessions of ISPSD.
  Prof. Chen also published many research results focusing on the junction edge termination techniques, a prominent result is “OPTimum Variation Lateral Doping (OPTVLD)” (1992), and the result provides a method for the surface lateral voltage-sustaining structures to get the highest surface breakdown voltage within a smallest surface width. By this method, high-voltage lateral devices can be made having good electric performances and technologically fully compatible with common CMOS and/or BiCMOS. Furthermore, based on OPTVLD, he invented a novel smart power technology, by which both high-side and low-side high-voltage devices of a totem pole, as well as other low voltage circuits can be integrated on one single chip. This technology breaks the technical bottleneck of requiring high-cost isolation process in the prior art, making the smart power ICs better and cheaper.
  In the past decades, Prof. Chen has published authored and coauthored over 120 papers along with seven books. He holds twenty granted and one pending U.S. patents and one pending WIPO patent, and seventeen granted and three pending Chinese patents. His inventions and researches significantly contribute to the advancement of the power electronics including power devices, smart power ICs, and device physics.
Education experience: B.Eng., Electrical Engineering, Tongji University
Selected Publications: [1] Bo Yi, Xingbi Chen. A 300 V ultra low specific on-resistance high-side p-LDMOS with auto-biased n-LDMOS for SPIC[J]. IEEE Trans. Power Electronics, 2017, 32(1): 551-560
[2] Ping Li, Xinjiang Lyu, Junji Cheng, Xingbi Chen. A low on-state voltage and saturation current TIGBT with self-biased pMOS. IEEE Electron Device Letters, 2016, 37(11): 1470-1472.
[3] Wenfang Du, Xingbi Chen. Design of a double-gate power LDMOS with improved SOA by complementary majority carrier conduction paths[J]. IEEE Trans. Power Electronics, 2016, 31(7): 5133-5140.
[4] Ping Li, Moufu Kong, Xingbi Chen. A novel diode-clamped CSTBT with ultra-low on-state voltage and saturation current. Proc. ISPSD, 2016, 307-310
[5] Mingmin Huang and Xingbi Chen. Theory of an improved vertical power MOSFET using high-k insulator[J]. Superlattices and Microstructures, 2015, 88(12): 244-253
[6] Mingmin Huang and Xingbi Chen. Vertical power Schottky barrier diodes using high-k insulator[J]. Semicond. Sci. Technol, 2015,30, 105021 (11pp)
[7] Bo Yi, Xinjiang Lyu, Xingbi Chen. A new super-junction VDMOS realizing fast reverse recovery[C]. Proc. PEDS, 2015, 122-125
[8] Zhi Lin, Xingbi Chen. A new solution for superjunction lateral double diffused MOSFET by using deep drain diffusion and field plates [J]. IEEE Electron Device Letters, 2015, 36(6): 588-590
[9] Wenfang Du, Xinjiang Lyu, Wai Tung Ng, Xingbi Chen. An ultra-low specific on-resistance LDMOST with self-driven split gate[J]. IEEE Trans. Electron Devices, 2015, 62(4): 1230-1234.
[10] Zhi Lin, Haimeng Huang, Xingbi Chen. An improved super-junction structure with variation vertical doping profile[J]. IEEE Trans. Electron Devices, 2015, 62(1): 228-231.
[11] Moufu Kong; Xingbi Chen. Novel technique for lateral high-voltage totem-pole power devices. IET Power Electronics, 2014, 7(9): 2396-2402
[12] Bo Yi, Zhi Lin, Xingbi Chen. Study on HK-VDMOS with deep trench termination. Superlattices and Microstructures, 2014, 87(7): 278-286
[13] Bo Yi, Zhi Lin, Xingbi Chen. Snapback-free reverse-conducting IGBT with low turnoff loss. Electronics Letters, 2014, 50(4): 703-705
[14] Xinjiang Lyu, Xingbi Chen. An ultralow specific ON-resistance LDMOST using charge balance by split p-gate and n-drift regions. IEEE Trans. Electron Devices, 2013, 60(11): 3821-3826
[15] Moufu Kong, Xingbi Chen. Study on dual channel n-p-LDMOS power devices with three terminals. IEEE Trans. Electron Devices, 2013, 60(10): 3508-3514
[16] Zhi Lin, Hao Hu, Junji Cheng and Xingbi Chen. A versatile low-cost smart power technology platform for applications over broad current and voltage ranges. Proc. BCTM, 2013, 93-96
[17] Junji Cheng, Xingbi Chen. New planar junction edge termination technique using OPTVLD with a buried layer. IEEE Trans. Electron Devices, 2013, 60(7): 2428-2431
[18] Moufu Kong, Xingbi Chen. A novel isolation method for half-bridge power ICs. IEEE Trans. Electron Devices, 2013, 60(7): 2318-2323
[19] Liheng Zhu, Xingbi Chen. A novel snapback-rree reverse conducting IGBT with anti-parallel Shockley diode. Proc. ISPSD, 2013, 261-264
[20] Junji Cheng, Xingbi Chen. A novel low-side structure for OPTVLD-SPIC technologically compatible with BiCMOS. Proc. ISPSD, 2013, 123-126
[21] Xinjiang Lyu, Xingbi Chen. Vertical power Hk-MOSFET of hexagonal layout. IEEE Trans. Electron Devices, 2013, 60(5): 1709-1715
[22] Haimeng Huang, Xingbi Chen. Optimization of specific on-resistance of semisuperjunction trench MOSFETs with charge balance. IEEE Trans. Electron Devices, 2013, 60(3): 1195-1201
[23] Junji Cheng, Xingbi Chen. A practical approach to enhance yield of OPTVLD products. IEEE Electron Device Letters, 2013, 34(2): 289-291
[24] Liheng Zhu, Xingbi Chen. An investigation of a novel snapback free reverse-conducting IGBT and with dual gates. IEEE Trans. Electron Devices, 2012, 59(11): 3048-3053
[25] Haimeng Huang, Xingbi Chen. Optimization of specific on-resistance of balanced symmetric superjunction MOSFETs based on a better approximation of ionization integral. IEEE Trans. Electron Devices, 2012, 59(10): 2742-2747
[26] Xingbi Chen, Mingmin Huang. A vertical power MOSFET with an interdigitated drift region using high-k insulator. IEEE Tran. Electron Devices, 2012, 59(9): 2430-2437
[27] Junji Cheng, Xingbi Chen. Low specific on-resistance p-type OPTVLD-LDMOS with double hole-conductive paths for SPIC application. Proc. ISPSD, 2012, 225-228
[28] Hao Hu, Zhi Lin, Xingbi Chen. A novel high voltage start-up current source for SMPS. Proc. ISPSD, 2012, 197-200
[29] Junhong Li, Ping Li, Weirong Huo, Guojun Zhang, Yahong Zhai, Xingbi Chen. Analysis and fabrication of an LDMOS with high-permittivity dielectric. IEEE Electron Device Letters, 2011, 32(9): 1266-1268
[30] Qimeng Jiang, Minzhi Wang, Xingbi Chen. A high-speed deep-trench MOSFET with a self-biased split gate. IEEE Trans. Electron Devices, 2010, 57(8): 1972-1977
[31] Jizhi Liu, Xingbi Chen. A novel self-generated low-voltage power supply for the gate-driver of high-voltage off-line SMPS. Proc. ISPSD, 2009, 184-187
Books: [1] Xingbi Chen, Qingzhong Zhang, Yong Chen. Microelectronics Devices. Publishing House of Electronics Industry, Beijing, 2011
[2] Xingbi Chen, Qingzhong Zhang. Principles and design of transistors. Publishing House of Electronics Industry, Beijing, 2006
[3] Xingbi Chen. Power MOSFET and high voltage ICs. Southeast University Press, Nanjing, 1990
[4] Xingbi Chen, Maocheng Tang. Principles and design of transistors. Chengdu Institute of Radio Engineering Press, Chengdu, 1987
[5] Xingbi Chen, Zhi Li. Numerical analysis of semiconductor devices. Chengdu Institute of Radio Engineering Press, Chengdu, 1986
[6] Xingbi Chen, Maocheng Tang. Principles of transistors. National Defense Industry Press, Beijing, 1981
[7] Xingbi Chen, Junming Yan, Zheng Fang. Introduction to solid state physics. National Defense Industry Press, Beijing, 1979
[8] Xingbi Chen. Physics of semiconductors. Editorial office of science education in Beijing, 1961-1962