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FF:Haizhi Song

published: 2016-12-27 14:46:57       hits: 

name : Haizhi Song Sex: Male phone: +86-28-83201896
email: office-address: Communication Building 708 (Shahe Campus)
PH.D  Supervisor: Yes Master Supervisor: Yes
major: Ph.D: Optical Engineering
research interst: Optoelectronic Materials and Integrated Devices, Sensitive Electronics and Sensor Technology
Biography: Prof. Haizhi Song received his Ph.D degree of condensed matter physics in Peking University and started his post-doctoral research in department of physics, Nanjing Univerisy in 1995. After 3 years, he finished his domestic work and go abroad to Japan, where he spent 16 years working in Japanese research units including Tsukuba University, Fujitsu Institute and Tokyo University. He is now a researcher of National 1000-Talent Program in Southwest Institute of Technical Physics, Chengdu. His research interests are based on semiconductor quantum dots prepared by molecular beam epitaxy and related optoelectronic devices. Numerous notable achievements such as Sb-free high density InAs/ GaAs quantum dots employed in semicondutor lasers, single-photon source Si/SiO2-InP compound resonator and spin states of InAs quantum dot molecule have been reported by Prof. Haizhi Song and his colleagues. He has published more than 60 SCI papers in high impact journals (Phys. Rev. B, Appl. Phys. Lett, J. Appl. Phys and so forth), having obtained 23 international patents and been invited to make significant presentations in conferences associated with semiconductor materials and devices. 
Education experience: 1995.7-1997.9   Department of physics, Nanjing University,Post-Doctor
1990-1995       Department of physics, Peking University,Ph.D
1986-1990       Department of physics, Nanjing University,Bachelor
Selected Publications: 1. Design of Si/SiO2 micropillar cavities for Purcell-enhanced single photon emission at 1.55 μm from InAs/InP quantum dots. Hai-Zhi Song, Kazuya Takemoto, Toshiyuki Miyazawa, Motomu Takatsu, Satoshi Iwamoto, Tsuyoshi Yamamoto, and Yasuhiko Arakawa. Optics Letters, Vol. 38, Issue 17, pp. 3241-3244 (2013).

2. AlGaAs capping effect on InAs quantum dots self-assembled on GaAs. H.Z. Song, Y. Tanaka, T. Yamamoto, N. Yokoyama, M. Sugawara, Y. Arakawa.Physics Letters A, Volume 375, Issue 40, 19 September 2011, Pages 3517–3520.

3. Wide-temperature-range 10.3 Gbit/s operations of 1.3 μm high-density quantum-dot DFB lasers. Electronics Letters, Volume 47, Issue 3. February 3 2011, 206-208.    
Books: 1. H.Z.Song and T. Usuki, “Studies of semiconductor quantum dots for quantum information processing”, chapter 9 in Self-assembled quantum dots, ed. Zh. M. Wang, 2008 Springer Science+Business Media, LLC.